发明名称 METHOD OF FABRICATING DUAL DAMASCENE STRUCTURES USING A MULTILEVEL MULTIPLE EXPOSURE PATTERNING SCHEME
摘要 A method for fabricating a dual damascene structure includes providing a first photoresist layer coated on an underlying dielectric stack, exposing said first photoresist layer to a first predetermined pattern of light, coating a second photoresist layer onto the pre-exposed first photoresist layer, exposing said second photoresist layer to a second predetermined pattern of light, optionally post-exposure baking the multi-tiered photoresist layers and developing said photoresist layers to form a multi-tiered dual damascene structure in the photoresist layers.
申请公布号 US2011204523(A1) 申请公布日期 2011.08.25
申请号 US20100708877 申请日期 2010.02.19
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 ARNOLD JOHN C.;CHEN KUANG-JUNG;COLBURN MATTHEW E.;GOLDFARB DARIO L.;HARRER STEFAN;HOLMES STEVEN J.;VARANASI PUSHKARA
分类号 H01L23/522;G03F7/20 主分类号 H01L23/522
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