| 摘要 |
The invention provides a transistor device comprising a source, a drain and a connecting channel, the channel is a nano-structure device adapted to allow current flow between the source and drain. The channel comprises an ultra-high doping concentration and is of the same polarity as in the source and/or drain. Essentially the transistor device of the present invention acts as a junctionless, highly-doped gated resistor. In the context of optimal performance of the transistor high doping means equal to or exceeds IxIO19 atom/cm3 results in that the device can operate as a junctionless transistor device. |
