COMPOSITION FOR FORMATION OF RESIST UNDERLAYER FILM CONTAINING SILICON HAVING NITROGEN-CONTAINING RING

摘要

Disclosed is a composition for forming a resist underlayer film for lithography purposes, which is used for the formation of a resist underlayer film that can be used as a hard mask. Specifically disclosed is a composition for forming a resist underlayer film for lithography purposes, which contains a hydrolysable organosilane or a hydrylysate or hydrolyzed and condensed product thereof as a silane compound, wherein a hydrolysable organosilane represented by formula (1) [wherein R1 represents a group represented by formula (2) (wherein R4 represents an organic group; R5 represents an alkylene group having 1 to 10 carbon atoms, a hydroxyalkylene group, a sulfide bond, an ether bond, an ester bond, or a combination of any two or more of them; and X1 represents a group represented by formula (3), (4) or (5)); R2 represents an organic group; and R3 represents a hydrolysable group] is contained as the hydrolysable organosilane.