INTEGRATED HALL EFFECT ELEMENT HAVING A GERMANIUM HALL PLATE
摘要
<p>An integrated circuit and a method of making the integrated circuit provide a Hall effect element having a germanium Hall plate. The germanium Hall plate provides an increased electron mobility compared with silicon, and therefore, a more sensitive Hall effect element.</p>
申请公布号
WO2011102923(A1)
申请公布日期
2011.08.25
申请号
WO2011US20619
申请日期
2011.01.10
申请人
ALLEGRO MICROSYSTEMS, INC.;WONG, HARIANTO;TAYLOR, WILLIAM, P.;VIG, RAVI
