发明名称 Power semiconductor module, has base plate with hermetically sealed chamber for retaining cooling fluid, and circuit carrier with lower side firmly connected with base plate, where lower side is turned away from upper metallization
摘要 <p>The semiconductor module (100) has a circuit carrier (2) with a flat insulation carrier (20), and an upper metallization (21) applied on the insulation carrier, where the metallization is provided with a power semiconductor chip (1). A base plate (8) has a hermetically sealed chamber (80) for retaining cooling fluid (85), and a lower side of the circuit carrier is firmly connected with the base plate, where the lower side is turned away from the upper metallization. The base plate has a wall (8t) provided at a side that is turned towards the circuit carrier. An independent claim is also included for a method for manufacturing a power semiconductor module.</p>
申请公布号 DE102010041714(A1) 申请公布日期 2011.08.25
申请号 DE20101041714 申请日期 2010.09.30
申请人 INFINEON TECHNOLOGIES AG 发明人 SCHULZ, MARTIN, DR.
分类号 H01L23/42;H01L23/40;H01L23/46;H01L23/473;H05K7/20 主分类号 H01L23/42
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