| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile data storage device that prevents bipolar phenomenon between pass transistors connected to a memory block of a memory cell array. <P>SOLUTION: When a program is executed in a nonvolatile data storage device, bipolar phenomenon between pass transistors connected to a memory block of a memory cell array is prevented, to improve reliability of data corresponding to the executed program. A programming method of the nonvolatile data storage device including a plurality of memory blocks sharing one block word line includes the steps of: selecting the plurality of memory blocks, applying program voltage to a selected word line of a memory block in which the program is executed among the plurality of memory blocks, and applying bipolar-prohibited voltage to a word line of a memory block in which a program in the plurality of memory blocks is prohibited. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
