METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a high performance semiconductor element inhibiting a pitting failure and forming the high performance semiconductor element through a simple process.

SOLUTION: The method has steps of: forming a gate electrode on a semiconductor substrate, a step of forming a side wall spacer on the gate electrode; forming a trench by partly etching the semiconductor substrate on the both sides of the side wall spacer; forming an SiGe mixed crystal layer in the trench; forming a silicon layer on the SiGe mixed crystal layer; and forming a capping layer containing a silicon facet (Si facet) having a 111 inclined plane by partly etching the silicon layer by using etchants with different etching rates in accordance with the crystal orientation of the plane of the silicon layer. Containing the capping layer increases the mobility of a hole in the semiconductor element. Reduction in pitting failures in the capping layer improves the characteristics of the semiconductor element.

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