| 摘要 |
PROBLEM TO BE SOLVED: To improve a breakdown voltage at an end of a memory cell array. SOLUTION: A nonvolatile semiconductor memory device 10 includes a first region in which a memory cell transistor is disposed, a second region in which an electrode 21 for extracting a word line electrically connected to the memory cell transistor is disposed, and a third region in which peripheral transistors are disposed. A plurality of first active regions AA1 having first widths are disposed in the first region, and a plurality of second and third active regions AA3, AA5 having second widths larger than the first widths are disposed in the second and third regions, respectively. An upper surface of an element isolation layer 23B in the second region is higher than that of an element isolation layer 23A in the first region, and the curvature radius of an upper corner of a charge storage layer 32B in the second region is larger than that of a charge storage layer 43 in the third region. COPYRIGHT: (C)2011,JPO&INPIT
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