| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a structure of a semiconductor device which suppresses a variation in channel length, and to provide a method for manufacturing the same. <P>SOLUTION: The method for manufacturing the semiconductor device includes steps of (a) etching regions of SiC semiconductor layers 1 and 2 which serve as impurity implantation regions 3 and a mark region to form recesses via a single mask, (b) performing ion-implantation in the recesses of the regions which serve as the impurity implantation regions 3 and the mark region at least from an oblique direction relative to the surface of the SiC semiconductor layers 1 and 2 via the same mask as in the step (a), and (c) positioning the other mask based on the recess of the region which serves as the impurity implantation region 3 or the mark region and performing well implantation in a region containing the impurity implantation regions 3. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
