| 摘要 |
Provided is a technology of performing more highly accurate semiconductor inspection by detecting a pattern edge which does not contribute as a mask in an etching step and measuring a pattern without including such edge at the time of calculating dimensions. Since a pattern portion having a protruding shape is to be removed at the time of etching, a scanning electron microscope image is acquired such that the protruding edge not functioning as a mask is to be excluded at the time of calculating dimensions in pattern inspection. Then, the shape of the pattern edge is calculated, the portion of the protruding edge is corrected, and pattern dimensions mainly obtained from recessed edges are calculated.
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