| 发明名称 |
PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM |
| 摘要 |
<p>A pattern forming method comprising (i) a step of forming a film from a chemical amplification resist composition, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using a developer containing an organic solvent, wherein the resist composition contains (A) a resin, (B) a compound capable of generating a specific acid upon irradiation with an actinic ray or radiation, (C) a crosslinking agent, and (D) a solvent.</p> |
| 申请公布号 |
WO2011102546(A1) |
申请公布日期 |
2011.08.25 |
| 申请号 |
WO2011JP54213 |
申请日期 |
2011.02.18 |
| 申请人 |
FUJIFILM CORPORATION;KATO, KEITA;TARUTANI, SHINJI;KAMIMURA, SOU;ENOMOTO, YUICHIRO;IWATO, KAORU |
发明人 |
KATO, KEITA;TARUTANI, SHINJI;KAMIMURA, SOU;ENOMOTO, YUICHIRO;IWATO, KAORU |
| 分类号 |
G03F7/004;G03F7/038;G03F7/32;H01L21/027 |
主分类号 |
G03F7/004 |
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