| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device avoiding failures occurring in a replacement gate process. <P>SOLUTION: The method of manufacturing the semiconductor device includes a step of forming a gate pattern including a gate insulating film and a sacrifice gate electrode on a semiconductor substrate, a step of forming an etching stop layer and an insulating layer on the semiconductor substrate and the gate pattern, a step of removing the insulating layer until the etching stop layer is exposed, a step of etching back the etching stop layer until the sacrifice gate electrode is exposed, a step of removing the sacrifice gate electrode and forming a metal layer on an upper surface of the entire structure of a resultant object, a step of removing the metal layer until the insulating layer is exposed, and a step of etching back the metal layer at a predetermined depth. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
