| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a planar display device which can stably form a microcrystalline film of uniform performance, by avoiding periodic deterioration of crystallinity, in a step for forming the microcrystalline film used in a thin-film transistor by the irradiation of laser. SOLUTION: When the surface of an amorphous silicon film is irradiated with a continuous oscillation laser beam and the amorphous silicon film is crystallized, while scanning a substrate relatively with the laser beam at a constant rate, scanning and crystallization are carried out so that the laser irradiation time per one region of the amorphous silicon film is not less than 0.1 ms. COPYRIGHT: (C)2011,JPO&INPIT |
