METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of forming a MOSFET element to be operated normally by compensating a B (boron) sucking out phenomenon and a P (phosphorus) pile-up phenomenon while ensuring reliability of a gate oxide film. SOLUTION: A p-type diffusion layer 10 is formed on the surface layer of an n-type diffusion layer 9. The B (boron) sucking out phenomenon and the P (phosphorus) pile-up phenomenon generated by formation of a gate oxide film 11 thereafter are compensated by carrying out a heat treatment of 900°C or higher. The p-type diffusion layer 10 surface that has become the n-type is returned to the p-type. Thereby, a method for manufacturing a semiconductor device having a MOSFET element to be operated normally while ensuring the reliability of the gate oxide film 11 is provided. COPYRIGHT: (C)2011,JPO&INPIT