| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device which suppresses the number of laminated memory cells while increasing memory density, as compared with conventional memory devices. SOLUTION: The nonvolatile semiconductor memory device has memory strings MS having: a plurality of transistors in a height direction of a semiconductor film 131, the transistors including electric charge trapping layers 133 formed on the side of the pillar-shaped semiconductor film 131; and gate electrode films 134 formed on the electric charge trapping layers 133. In the memory strings MS, memory strings columns connected between the gate electrode films 134 of the transistors of the same height of the memory strings MS disposed in a first direction are disposed on a semiconductor substrate 101 so that two memory strings groups disposed in parallel and adjacent to a second direction are disposed at predetermined spacing in the second direction, and insulating films 124 are formed between the two memory strings columns disposed in parallel and adjacent to the second direction inside the memory strings groups to be electrically separated. COPYRIGHT: (C)2011,JPO&INPIT |
