METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that suppresses warpage of a wafer and reduces manufacturing cost. SOLUTION: Firstly, at least a first epitaxial layer being a p+collector layer 1, a second epitaxial layer being a n+buffer layer 2, and a third epitaxial layer being an n-drift layer 3 are laminated as a reverse-side element structure on a surface of a silicon substrate 30. Then, a fourth epitaxial layer to serve as a (p) base region is deposited as a top-side element structure on a surface of the third epitaxial layer. Further, at least an n+emitter region and a gate structure of a gate electrode, etc., are formed as the top-side element structure on the fourth epitaxial layer. Then the silicon substrate 30 is removed. Furthermore, the first epitaxial layer is made uniformly thinner from the side having been in contact with the silicon substrate 30 to be as thick as a region to serve as the p+ collector layer 1 when an FS type IGBT is completed. COPYRIGHT: (C)2011,JPO&INPIT