| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem with a semiconductor device which use properties of a semiconductor of nano-materials, wherein the semiconductor characteristics are degraded due to a metallic nano-material. SOLUTION: In a method of manufacturing the semiconductor device, conductivity of a semiconductor nano-material among the semiconductor nano-material and metallic nano-material included in a plurality of nano-materials is lowered first. Then a cutting promoting material which promotes an action to cut the metallic nano-material is stuck on the metallic nano-material. Further, the metallic nano-material on which the cutting promoting material is cut. COPYRIGHT: (C)2011,JPO&INPIT |
