发明名称 |
NONVOLATILE MEMORY DEVICE AND METHOD OF READING THE SAME |
摘要 |
Provided are a nonvolatile memory device and a method of reading the same. The nonvolatile memory device includes: a memory cell; a transistor disposed between a common source line and the memory cell; and a control logic for controlling a bias voltage of the transistor to reduce the amount of current flowing into the common source line during a read operation. The method includes: applying a read voltage to the memory cell; and controlling a bias voltage of the transistor to reduce the amount of current flowing into the common source line. |
申请公布号 |
US2011205802(A1) |
申请公布日期 |
2011.08.25 |
申请号 |
US201113029947 |
申请日期 |
2011.02.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOE BYEONG-IN;CHANG SUNG-IL;KANG CHANGSEOK |
分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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