发明名称 NONVOLATILE MEMORY DEVICE AND METHOD OF READING THE SAME
摘要 Provided are a nonvolatile memory device and a method of reading the same. The nonvolatile memory device includes: a memory cell; a transistor disposed between a common source line and the memory cell; and a control logic for controlling a bias voltage of the transistor to reduce the amount of current flowing into the common source line during a read operation. The method includes: applying a read voltage to the memory cell; and controlling a bias voltage of the transistor to reduce the amount of current flowing into the common source line.
申请公布号 US2011205802(A1) 申请公布日期 2011.08.25
申请号 US201113029947 申请日期 2011.02.17
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOE BYEONG-IN;CHANG SUNG-IL;KANG CHANGSEOK
分类号 G11C16/04 主分类号 G11C16/04
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