| 摘要 |
<p>Disclosed is a method for manufacturing a solar cell, wherein a hetero junction photoelectric conversion layer (13), including a p-type semiconductor and an n-type semiconductor, is formed between a pair of electrodes (11, 12) which are disposed by being spaced apart from each other, thermal annealing is performed, while applying an alternating current voltage at a frequency of 0.01kHz-1kHz to the photoelectric conversion layer (13), and the mixing state of the p-type semiconductor and the n-type semiconductor in the photoelectric conversion layer (13) is controlled.</p> |
