METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

摘要

A plurality of silicon carbide substrates (10) and a support portion (30) are heated. The temperature of a first radiation surface (RP1) is set to the first temperature. The first radiation surface (RP1) faces the plurality of silicon carbide substrates (10) in a first space (SP1), which extends from the plurality of silicon carbide substrates (10) in a direction which is perpendicular to one plane (PL1) and is away from the support portion (30). The temperature of a second radiation surface (RP2) is set to the second temperature, which is higher than the first temperature. The second radiation surface (RP2) faces the support portion (30) in a second space (SP2), which extends from the support portion (30) in a direction which is perpendicular to the one plane (PL1) and is away from the plurality of silicon carbide substrates (10). The temperature of a third radiation surface (RP3) is set to the third temperature, which is lower than the second temperature. The third radiation surface (RP3) faces the plurality of silicon carbide substrates (10) in a third space (SP3), which extends from gaps (GP) between the plurality of silicon carbide substrates (10) along the one plane (PL1).