THIN FILM TRANSISTOR PANEL AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a thin film transistor substrate, along with a method of manufacturing the same, capable of preventing degradation of an oxide semiconductor pattern in a manufacturing process.

SOLUTION: The thin film transistor substrate includes: an insulating substrate 10; a gate electrode 24 and a gate insulating layer 30 formed on the insulating substrate 10; an oxide semiconductor pattern 42 arranged on the gate insulating layer 30; an etching prevention pattern 52 formed on the oxide semiconductor pattern 42; and a source electrode 65 and a drain electrode 66 formed on the etching prevention pattern 52. In the substrate, all sides of the etching prevention pattern 52 are arranged inside of side faces of the oxide semiconductor pattern 42.

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