| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a surface emitting laser element capable of lowering resistance in the element without degrading light emitting characteristics. <P>SOLUTION: The surface emitting laser element has a lower semiconductor DBR, a lower spacer layer (n-side spacer layer), an active layer, an upper spacer layer (p-side spacer layer), an upper semiconductor DBR, and the like. These elements are laminated on a substrate. The active layer is sandwiched by the lower spacer layer and the upper spacer layer. The upper spacer layer has an undoped region containing no p-type dopant at least at a part in contact with the active layer, and the lower spacer layer has an n-type dopant doped all over. Accordingly, the resistance in the element can be lowered without degrading the light emitting characteristics. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
