| 摘要 |
PROBLEM TO BE SOLVED: To provide a measures for reducing polish-caused defects for obtaining a semiconductor wafer having high surface quality adaptable to high integration of a device, in a method of manufacturing a semiconductor wafer including a polishing step having a plurality of steps. SOLUTION: This method of manufacturing a semiconductor wafer includes a polishing step of polishing a semiconductor wafer surface. The polishing step includes at least three steps that are a step preceding by two steps from finish-polishing step, a step preceding by one step from finish-polishing step, and a finish-polishing step. An abrasive used for the step preceding by one step from finish-polishing step satisfies the following (1) and (2). (1) Particle sizes of contained polishing abrasive grains (polishing abrasive grains used for the step preceding by one step from finish-polishing step) are not smaller than those of the polishing abrasive grains (polishing abrasive grains used for the step preceding by two steps from finish-polishing step) contained in the abrasive used for the step preceding by two steps from finish-polishing step. (2) A density of the polishing abrasive grains used for the step preceding by one step from finish-polishing step is not larger than that of the polishing abrasive grains of the abrasive used for the step preceding by two steps from finish-polishing step. COPYRIGHT: (C)2011,JPO&INPIT |
