| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, capable of reducing injection mask, and to provide such a semiconductor device. SOLUTION: The method includes: injecting boron into an NMOS region RN using a resist mask 31 and other resist masks as an injection mask; and forming p-type impurity regions which become a halo region of access transistor and drive transistor. Further, the method includes: injecting phosphorus or arsenic into a PMOS region RP using other resist masks as an injection mask; and forming n-type impurity regions which become a halo region of load transistor. COPYRIGHT: (C)2011,JPO&INPIT |
