| 摘要 |
<p>The present disclosure minimizes gate volume without reducing semiconductor device pressure resistance, and interferes with the occurrence of current leakages between primary electrodes even when defects arise in the formation of metal oxide films. A semiconductor device comprises gate electrodes and dummy gate electrodes. The gate electrodes are insulated from emitter electrodes, and are in opposition to body regions of ranges that separate a drift region and an emitter region, with insulator films interposed therebetween. The dummy gate electrodes have continuity with the emitter electrodes, and are connected to the drift regions and the body regions across the insulator films. The dummy gate electrodes further comprise a first electroconductive member region upon at least a portion thereof of a type that is reverse conductive to the drift region. In the dummy gate electrodes, the emitter electrodes are separated from the drift regions by the first electroconductive member regions.</p> |
