| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device, having a novel structure which includes a combination of semiconductor elements having different characteristics and is capable of realizing higher integration. <P>SOLUTION: The semiconductor device includes a first transistor which includes a first channel formation region including a first semiconductor material, and a first gate electrode; and a second transistor which includes one of a second source electrode and a second drain electrode combined with the first gate electrode, and a second channel forming region, including a second semiconductor material and electrically connected to the second source electrode and the second drain electrode. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
