| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a silicon carbide semiconductor device, capable of forming a plurality of impurity regions having different impurity concentrations by a mask process at one time. SOLUTION: The method of manufacturing the silicon carbide semiconductor device includes (a) a step of forming an implanting mask consisting of a plurality of unit masks on a silicon carbide semiconductor layer and (b) a step of implanting specified ions to the silicon carbide semiconductor layer by a specified implanting energy by using the implanting mask. In the process (a), a distance from an arbitrary point in each unit mask to the end of the unit mask is set in a scattering distance or less at a time when specified ions are implanted to the silicon carbide by the specified implanting energy, and the implanting mask is formed so as to have a plurality of regions having different sizes and spaces in layouts in the unit masks. COPYRIGHT: (C)2011,JPO&INPIT |
