| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface acoustic wave device which uses leakage surface acoustic waves, and is capable of increasing a sound speed and easily achieving a frequency increase. SOLUTION: In the surface acoustic wave device 1, an IDT electrode 3 is formed on an LiNbO<SB>3</SB>substrate 2, a silicon oxide film 6 is formed so as to cover the IDT electrode 3 on the LiNbO<SB>3</SB>substrate 2, and a dielectric layer 7 is formed on the silicon oxide film 6. The transverse wave speed of the dielectric layer 7 is higher than a slow transverse wave velocity in LiNbO<SB>3</SB>, and when the film thickness of the dielectric layer 7 is defined as H3, a normalized film thickness H3/λnormalized by the wavelengthλof the leakage surface acoustic waves lies in the range of 0.25-0.6. COPYRIGHT: (C)2011,JPO&INPIT
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