| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory device lowering a contact resistance between a silicon diode and an electrode film, and to provide a method of manufacturing the memory device. SOLUTION: The silicon diode doping impurities at least on the upper layer and consisting of a semiconductor material containing silicon is formed. A metal layer consisting of metal is deposited on the silicon diode. A metal nitride layer consisting of the nitride of metal is deposited on the metal layer, and a resistance changing film is formed. The silicon diode, the metal layer and the metal nitride layer are reacted by carrying out heat treatment, and an electrode film containing the metal, silicon, and nitrogen is formed. Accordingly, the memory device is manufactured. COPYRIGHT: (C)2011,JPO&INPIT
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