| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing apparatus, capable of providing a boron nitride film having a high etching resistance and having a low permittivity, or to provide a method of manufacturing a semiconductor device, capable of providing a boron nitride film having a high etching resistance and having a low permittivity. SOLUTION: Formation of a boron nitride film having a predetermined film thickness includes a step of carrying a substrate 16 in a treating chamber 21, a boron film formation step of supplying at least a boron-containing gas 31a in the treating chamber 21 and forming a boron film on the substrate 16, and a nitridation step of supplying at least a nitrogen-containing gas 31c in the treating chamber and nitriding the boron film formed in the boron film formation step, and further includes a series of the boron film formation step and the nitridation step is repeated twice or more. COPYRIGHT: (C)2011,JPO&INPIT |
