发明名称 |
INTEGRATED CIRCUITS INCLUDING MULTI-GATE TRANSISTORS LOCALLY INTERCONNECTED BY CONTINUOUS FIN STRUCTURE AND METHODS FOR THE FABRICATION THEREOF |
摘要 |
Embodiments of an integrated circuit are provided. In one embodiment, the integrated circuit includes a substrate and a plurality of locally interconnected multi-gate transistors. The plurality of locally interconnected multi-gate transistors includes a continuous fin structure formed on the substrate and first and second multi-gate transistors formed on the substrate and including first and second fin segments of the continuous fin structure, respectively. The continuous fin structure electrically interconnects the first and second multi-gate transistors.
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申请公布号 |
US2011204419(A1) |
申请公布日期 |
2011.08.25 |
申请号 |
US20100711022 |
申请日期 |
2010.02.23 |
申请人 |
GLOBALFOUNDRIES INC. |
发明人 |
JOHNSON FRANK SCOTT;KNORR ANDREAS |
分类号 |
H01L27/08;H01L21/70;H01L23/52 |
主分类号 |
H01L27/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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