发明名称 |
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE FABRICATION |
摘要 |
The present invention provides a semiconductor device including: a first resistance element formed of a first polysilicon layer that contains impurities; a second resistance element provided on a same surface as the first polysilicon layer, and formed of a second polysilicon layer that contains an equal amount of impurities to the first polysilicon layer; a first interlayer insulation film provided so as to cover the first resistance element and the second resistance element; and a first metal layer provided on the first interlayer insulation film so as to cover the second resistance element with the first interlayer insulation film disposed therebetween.
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申请公布号 |
US2011204481(A1) |
申请公布日期 |
2011.08.25 |
申请号 |
US201113031705 |
申请日期 |
2011.02.22 |
申请人 |
OKI SEMICONDUCTOR CO., LTD. |
发明人 |
KUSANO KENICHIRO;AZAMI JUNKO |
分类号 |
H01L29/66;H01L21/02 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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