| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for processing a silicon substrate which obtains a structure having a plurality of the second through-holes communicating with the first through-holes and having a good shape precision at good yield. <P>SOLUTION: There is prepared a group of the first silicon substrate 102, the second silicon substrate 101, and an intermediate layer 103 mounted between the first silicon substrate 102 and the second silicon substrate 101 and having a plurality of recesses 109. The first through-holes 107 are formed by etching the first silicon substrate 102 from the reverse surface of the join surface of the first silicon substrate 102 with the intermediate layer 103 using the first mask. The second through-holes 108 are formed by exposing the portion corresponding to a plurality of the recesses 109 of the intermediate layer 103, removing the bottom portions of the recesses 109 to form a plurality of openings in the intermediate layer, and secondly etching the second silicon substrate 101 using the intermediate layer as a mask on which the openings are formed. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
