| 摘要 |
A zinc oxide based substrate satisfies a condition that impurities Si, C, Ge, Sn, and Pb which are Group IV elements each have a concentration of 1×1017 cm−3 or less. More preferably, the zinc oxide based substrate 2 satisfies a condition that impurities Li, Na, K, Rb, and Fr which are Group I elements each have a concentration of 1×1016 cm−3 or less. The impurity concentration of a zinc oxide based semiconductor grown on the zinc oxide based substrate can be reduced in this manner.
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