发明名称 SEMICONDUCTOR DIODE AND METHOD FOR PRODUCING A SEMICONDUCTOR DIODE
摘要 A semiconductor diode comprises a first semiconductor layer (102) of a first conductivity and a second semiconductor layer of a second conductivity with a dopant. The second semiconductor layer has a vertical electrical via region (106) connected to the first semiconductor layer, in which region the dopant is modified such that the electrical via region (106) has the first conductivity. The invention describes a method for producing said semiconductor diode.
申请公布号 WO2011101280(A1) 申请公布日期 2011.08.25
申请号 WO2011EP51925 申请日期 2011.02.10
申请人 OSRAM OPTO SEMICONDUCTORS GMBH;ALBRECHT, TONY;MAUTE, MARKUS;REUFER, MARTIN;ZULL, HERIBERT 发明人 ALBRECHT, TONY;MAUTE, MARKUS;REUFER, MARTIN;ZULL, HERIBERT
分类号 H01L33/38 主分类号 H01L33/38
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