| 摘要 |
In a semiconductor integrated circuit device having plural layers of buried wirings, it is intended to prevent the occurrence of a discontinuity caused by stress migration at an interface between a plug connected at a bottom thereof to a buried wiring and the buried wiring. For example, in the case where the width of a first Cu wiring is not smaller than about 0.9μm and is smaller than about 1.44μm, and the width of a second Cu wiring and the diameter of a plug are about 0.18μm, there are arranged two or more plugs which connect the first wirings and the second Cu wirings electrically with each other. |
