| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a substrate processing method that reduces variance in line widths of resist patterns between substrates without increasing a processing time when the resist pattern is formed on each substrate having a resist film formed by performing exposure a plurality of times and also carrying out heating processing and developing processing. <P>SOLUTION: The substrate processing method of processing the substrate having the resist film formed includes exposing steps S13, S15 of exposing the substrate the plurality of times and a heating processing step S16 of performing the heating processing on the substrate before the substrate is developed after the exposing steps S13, S15. In the heating processing step S16, a heating temperature of the heating processing is corrected based upon the lapse from the end of first exposure to the start of the heating processing. <P>COPYRIGHT: (C)2011,JPO&INPIT |
