EPI WAFER AND SILICON SINGLE CRYSTAL INGOT FOR THE SAME AND FABRICATION METHOD THEREOF
摘要
<p>An EPI wafer according to the present invention includes a single crystal substrate and an EPI layer grown on the single crystal substrate, wherein the single crystal substrate is doped with nitrogen, and crystal defects existing in the single crystal substrate have an octahedral or overlapping kite-shaped morphology.</p>
