| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which reduces an amount of the lateral run-off of a solder bump electrode when forming a mounting structure of flux-less chip-on-chip at the application of heat and pressure, and hardly generates a short circuit between the adjacent solder bump electrodes, its manufacturing method, the mounting structure of the chip-on-chip using the semiconductor device, and its forming method. <P>SOLUTION: The semiconductor device 15 is constituted so that a pad electrode 2 is formed on a semiconductor substrate 1, a UBM layer 7 is formed on a pad electrode 2 by electrolytic plating, and a solder bump electrode 8 is formed on the UBM layer 7 by electrolytic plating where exposed surfaces including side surfaces of the UBM layer 7 are covered by the solder bump electrode 8. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
