| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a memory system capable of correctly detecting the degraded state of the whole nonvolatile semiconductor memory constituted of a plurality of blocks. <P>SOLUTION: The memory system includes: a NAND memory 20 as the nonvolatile semiconductor memory that includes a plurality of blocks as a unit of data erasing; a writing loop count monitoring unit 13 that monitors the loop count of an applied voltage to the NAND memory 20 required for the data writing of the NAND memory 20 as a writing loop count; a management table for managing the writing loop count in a block unit; and a life managing unit 14 that determines the degraded state of the NAND memory 20 based on the management table. <P>COPYRIGHT: (C)2011,JPO&INPIT |
