| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having an electrostatic protective element that compatibly improves discharge efficiency and suppresses transfer of potential variation in normal operation. SOLUTION: The semiconductor device includes: a first protective element having a first circuit electrically connected between a first power supply potential wiring and a first ground potential wiring, and a MOS transistor diode-connected between the first power supply potential wiring and the first ground potential wiring; a second protective element having a second circuit electrically connected between a second power supply potential wiring and a second ground potential wiring, and a MOS transistor diode-connected between the second power supply potential wiring and the second ground potential wiring; and a third protective element in which two MOS transistors diode-connected in parallel mutually in a reverse bias state, are electrically connected between the first ground potential wiring and the second ground potential wiring. Here, threshold voltages of the two MOS transistors of the third protective element are set to be larger than threshold voltages of the respective MOS transistors of the first protective element and second protective element. COPYRIGHT: (C)2011,JPO&INPIT
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