发明名称 SUBSTRATE FOR SEMICONDUCTOR ELEMENT, METHOD FOR MANUFACTURING THE SAME AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a substrate for a semiconductor element, capable of preventing separation between a resin substrate and a porous formed on the resin substrate, by improving the adhesiveness of the porous layer. SOLUTION: The substrate has a structure, in which an adhesion layer 3 made of a compound obtained by hydrolysis or condensation reaction of alkoxysilane is formed on the resin substrate 2 and the porous layer 4, made of a compound obtained through hydrolysis or condensation reaction of alkoxysilane and having a density of &le;0.7 g/cm<SP>3</SP>formed on the adhesion layer 3. COPYRIGHT: (C)2011,JPO&amp;INPIT
申请公布号 JP2011165803(A) 申请公布日期 2011.08.25
申请号 JP20100025360 申请日期 2010.02.08
申请人 FUJIFILM CORP 发明人 SATO KEIGO;YUYA SHIGENORI
分类号 H01L21/312 主分类号 H01L21/312
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