STACKED SEMICONDUCTOR DEVICE

摘要

A stacked semiconductor device includes a plurality of first electrodes (4a - 4e) provided on a first printed wiring board (1) and columnar electrodes provided on the first electrodes. The stacked semiconductor device also includes a plurality of second electrodes (24a - 24e) provided on a second printed wiring board (21) and a plurality of solder electrodes (25). The columnar electrodes are formed of a material having a melting point higher than that of the solder electrodes, and the height of the columnar electrodes is set to increase as a distance between the first electrodes and the solder electrodes increases. This avoids connection failure without reducing joinability between two stacked semiconductor devices.