发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 A method for manufacturing a semiconductor device makes it possible to efficiently polish with a polishing tape a peripheral portion of a silicon substrate under polishing conditions particularly suited for a deposited film and for silicon underlying the deposited film. The method includes: pressing a first polishing tape against a peripheral portion of a device substrate having a deposited film on a silicon surface while rotating the device substrate at a first rotational speed, thereby removing the deposited film lying in the peripheral portion of the device substrate and exposing the underlying silicon; and pressing a second polishing tape against the exposed silicon lying in the peripheral portion of the device substrate while rotating the device substrate at a second rotational speed, thereby polishing the silicon to a predetermined depth.
申请公布号 US2011207294(A1) 申请公布日期 2011.08.25
申请号 US201113027551 申请日期 2011.02.15
申请人 NAKANISHI MASAYUKI;TOGAWA TETSUJI;ITO KENYA;SEKI MASAYA;IWADE KENJI;KUBOTA TAKEO 发明人 NAKANISHI MASAYUKI;TOGAWA TETSUJI;ITO KENYA;SEKI MASAYA;IWADE KENJI;KUBOTA TAKEO
分类号 H01L21/762 主分类号 H01L21/762
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