| 摘要 |
<p>Non-volatile memory device organised with memory cells that are arranged by row and by column, comprising at least a sector of matrix cells (100), row decoders (D) and column decoders suitable to decode address signals and to activate respectively said rows or said columns, at least a sector of redundancy cells (110) such that it is possible to substitute a row of said sector of matrix cells with a row of said sector of redundancy cells. Said non-volatile memory device comprises a local column decoder (L) for said matrix sector (100) and a local column decoder (L) for said redundancy sector (110). The local column decoders (L) are controlled by external signals so that said row of said redundancy sector (110) is activated simultaneously with said row of said matrix sector (100). <IMAGE></p> |
