发明名称 WIRING FABRICATING METHOD
摘要 <p>In the case in which a film for a resist is formed by spin coating, there is a resist material to be wasted, and the process of edge cleaning is added as required. Further, when a thin film is formed on a substrate using a vacuum apparatus, a special apparatus or equipment to evacuate the inside of a chamber vacuum is necessary, which increases manufacturing cost. The invention is characterized by including: a step of forming conductive layers on a substrate having a dielectric surface in a selective manner with a CVD method, an evaporation method, or a sputtering method; a step of discharging a compound to form resist masks so as to come into contact with the conductive layer; a step of etching the conductive layers with plasma generating means using the resist masks under the atmospheric pressure or a pressure close to the atmospheric pressure; and a step of ashing the resist masks with the plasma generating means under the atmospheric pressure or a pressure close to the atmospheric pressure. With the above-mentioned characteristics, efficiency in use of a material is improved, and a reduction in manufacturing cost is realized.</p>
申请公布号 EP1592053(B1) 申请公布日期 2011.08.24
申请号 EP20040706799 申请日期 2004.01.30
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI, SHUNPEI;KUWABARA, HIDEAKI
分类号 H01L21/3213;B05D3/04;C23C16/44;C23C16/455;C23C16/509;C23C16/54;G09F9/30;H01L21/28;H01L21/285;H01L21/3065;H01L21/312;H01L21/336;H01L21/768;H01L27/32;H01L51/00;H01L51/40;H01L51/52;H05K3/14 主分类号 H01L21/3213
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