| 摘要 |
<p>According to one embodiment, a III-nitride transistor includes a conduction channel (114) formed between first and second III-nitride bodies (110,112), the conduction channel (114) including a two-dimensional electron gas. The transistor also includes at least one gate dielectric layer (125) having a charge confined within to cause an interrupted region of the conduction channel (114) and a gate electrode operable (123) to restore the interrupted region of the conduction channel. The transistor can be an enhancement mode transistor. In one embodiment, the gate dielectric layer (125) is a silicon nitride layer. In another embodiment, the at least one gate dielectric layer is a silicon oxide layer. The charge can be ion implanted into the at least one gate dielectric layer. The at least one gate dielectric layer can also be grown with the charge.</p> |
