PHASE-CHANGE MEMORY ELEMENTS AND FABRICATION METHOD THEREOF

摘要

PURPOSE: A phase change memory device and a manufacturing method thereof are provided to improve the retention property of a device by adding a chalcogenides compound with boron nitride to a phase change material. CONSTITUTION: In a phase change memory device and a manufacturing method thereof, a first electrode(11) is formed on a semiconductor substrate(10). A first insulating layer is formed on the first electrode. A first electrode contact(13) is formed on the first insulating layer. A phase changing material film(14) including boron nitride is formed on the first electrode contact. A second electrode(16) is formed on the phase changing material film.