SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

A JFET (1) is a semiconductor device allowing more reliable implementation of the characteristics essentially achievable by employing SiC as a material and includes a wafer (10) having at least an upper surface (14A) made of silicon carbide, and a gate contact electrode (21) formed on the upper surface (14A). The wafer (10) includes a first p-type region (16) serving as an ion implantation region formed so as to include the upper surface (14A). The first p-type region (16) includes a base region (16A) disposed so as to include the upper surface (14A), and a protruding region (16B). The base region (16A) has a width (w 1 ) in the direction along the upper surface (14A) greater than a width (w 2 ) of the protruding region (16B). The gate contact electrode (21) is disposed in contact with the first p-type region (16) such that the gate contact electrode (21) is entirely located on the first p-type region (16) as seen in plan view.