METHOD FOR GROWING NITRIDE SEMICONDUCTOR AND NITRIDE SEMICONDUCTOR SUBSTRATE FORMED THEREFROM

摘要

PURPOSE: A method for growing a nitride semiconductor layer and a nitride semiconductor substrate formed by the same are provided to grow a nitride semiconductor layer without a crack due to a strain by growing a nitride semiconductor layer using a nitride semiconductor dot as a core. CONSTITUTION: A sapphire substrate(10) is prepared. A nitride semiconductor dot(30) is formed on the substrate. A nitride semiconductor layer(50) is grown on the nitride semiconductor dot. A stress buffer layer is formed between the nitride semiconductor dot and the nitride semiconductor layer. The nitride semiconductor dot is formed with in-situ when a nitride semiconductor layer is grown on the substrate with HVPE(Hydride or Halide Vapor Phase Epitaxy).